 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N60U/D Product Preview Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies. * * * * * Industry Standard TO-220 Package High Speed Eoff: 67 mJ/A typical at 125C Low On-Voltage - 1.7 V typical at 10 A, 125C Robust High Voltage Termination ESD Protection Gate-Emitter Zener Diodes MGP20N60U IGBT IN TO-220 20 A @ 90C 31 A @ 25C 600 VOLTS VERY LOW ON-VOLTAGE C G G C E E CASE 221A-09, Style 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a new product. Specifications and information herein are subject to change without notice. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg RJC RJA TL Value 600 600 20 31 20 40 142 0.89 - 55 to 150 1.12 65 200 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C C/W C (c) Motorola IGBT Device Motorola, Inc. 1997 Data 1 MGP20N60U ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) Emitter-to-Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 5.0 Adc) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125C) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Gate Charge (VCC = 360 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. LE -- 7.5 -- nH (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 25 C) 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- 43 45 144 175 340 43 56 235 220 625 57 12 25 -- -- -- -- -- -- -- -- -- -- -- -- -- ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 1060 99 15 -- -- -- pF VCE(on) -- -- -- VGE(th) 3.0 -- gfe -- 5.0 10 7.0 7.0 -- -- 1.4 1.3 1.7 1.7 -- 2.0 Vdc mV/C Mhos Vdc V(BR)CES 600 -- V(BR)ECS ICES -- -- IGES -- -- -- -- 10 200 50 Adc 15 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit mJ ns mJ nC 2 Motorola IGBT Device Data MGP20N60U 60 17.5 V IC , COLLECTOR CURRENT (AMPS) 50 20 V 40 30 20 10 TJ = 25C 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VGE = 10 V 15 V 12.5 V IC , COLLECTOR CURRENT (AMPS) 50 20 V 40 30 20 10 TJ = 125C VGE = 10 V 60 17.5 V 15 V 12.5 V Figure 1. Output Characteristics Figure 2. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) 50 40 30 20 10 0 5 6 7 8 9 10 11 VCE = 100 V 5.0 mS PULSE WIDTH VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) TJ = 25C 125C 1.8 IC = 10 A 1.7 7.5 A 1.6 1.5 5.0 A 1.4 1.3 -50 VGE = 15 V 80 mS PULSE WIDTH -25 0 25 50 75 100 125 150 12 13 14 15 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-To-Emitter Saturation Voltage versus Junction Temperature TJ = 25C VGE = 0 V C, CAPACITANCE (pF) 1600 Cies Coes 800 Cres VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 2400 20 16 QT 12 Q1 8 TJ = 25C VCC = 300 V IC = 10 A Q2 4 0 0 20 40 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 60 80 QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-To-Emitter Voltage versus Total Charge Motorola IGBT Device Data 3 MGP20N60U 1.2 Eoff , TURN-OFF ENERGY LOSSES (mJ) Eoff , TURN-OFF ENERGY LOSSES (mJ) IC = 10 A 7.5 A 0.8 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 VCC = 360 V VGE = 15 V RG = 20 W IC = 10 A 1.0 7.5 A 5.0 A 0.6 5.0 A TJ = 125C VDD = 360 V VGE = 15 V 5 15 25 35 45 50 0.4 0.2 RG, GATE RESISTANCE (OHMS) -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) Figure 7. Turn-Off Losses versus Gate Resistance Figure 8. Turn-Off Losses versus Junction Temperature 1.2 Eoff , TURN-OFF ENERGY LOSSES (mJ) 1.0 0.8 0.6 0.4 0.2 0 0 2.5 5 7.5 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W 100 10 TJ = 125C VGE = 15 V RG = 20 W 1 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 9. Turn-Off Losses versus Collector Current Figure 10. Reverse Biased Safe Operating Area 4 Motorola IGBT Device Data MGP20N60U PACKAGE DIMENSIONS -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR CASE 221A-09 ISSUE Z Motorola IGBT Device Data 5 MGP20N60U Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 Motorola IGBTMGP20N60U/D Device Data |
Price & Availability of MGP20N60U
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |